Open AccessDesign and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
Author(s) -
Jinfeng Kang,
Peng Huang,
Bin Gao,
Haitong Li,
Zhe Chen,
Yudi Zhao,
Chen Liu,
Lifeng Liu,
Xiaoyan Liu
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2577051
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied. In this paper, the critical issues correlated with the applications of oxide-based RRAM are addressed. The physical mechanism and models of oxide-based RRAM are first introduced. Then the optimization design methodology of devices and operation schemes is discussed. Finally, a novel architecture for unifying memory/computing system is presented.