Open AccessBilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability
Author(s) -
Marinela Barci,
Gabriel Molas,
Carlo Cagli,
Elisa Vianello,
Mathieu Bernard,
Anne Roule,
Alain Toffoli,
Jacques Cluzel,
Barbara De Salvo,
Luca Perniola
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2567219
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, a detailed reliability analysis of metal-oxide conductive bridge memories (CBRAM) is presented. This paper mostly focuses on electrical characterization of metal-oxide CBRAM devices endurance, using optimized program/erase conditions, and data retention at high temperature. The addition of a thin metal-oxide layer (0.5 nm-thick Al2O3) in the bottom of the GdOx memory stack significantly increases the ROFF and the memory window (more than one decade), with improved endurance performance (up to 105 cycles) with respect to the monolayer CBRAM device. Meanwhile, high thermal stability was also achieved (two decades of window margin are constantly maintained beyond 24 h at 250 °C). The bilayer oxide GdOX/Al2O3 CBRAM is a promising technology for potential future high density memory applications.