Open AccessCMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout
Author(s) -
Tomer Saraf,
Igor Brouk,
Sharon Bar-Lev Shefi,
Aharon Unikovsky,
Tanya Blank,
Praveen Kumar Radhakrishnan,
Yael Nemirovsky
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2539980
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
A new generation of uncooled passive infrared (PIR) security sensors based on a suspended thermal transistor MOS (TMOS), fabricated in standard CMOS-SOI process, released by post-etching, and wafer level packaged achieving a vacuum of <;4 Pa, has been developed at the Technion. One of the important features of TMOS is very low power consumption (in this case, ~2-4 nWatt) due to its subthreshold operation requiring ~10 nA at 0.2 V, enabling wide range of battery applications. This paper focuses on the analog design of monolithically integrated readout for the electronic system, formed by the PIR sensor, its front-end analog interface and the processing circuitry. The measured signal-to-noise ratio of this system is 100-200, depending on the operation point, at the black-body temperature of 50° C, while the total input referred noise is ≤1 μVrms and the total system current consumption is no more than 20 μA. The sensors and read-out are processed with the same CMOS-SOI technology.