Open AccessRealizing Efficient Volume Depletion in SOI Junctionless FETs
Author(s) -
Shubham Sahay,
Mamidala Jagadesh Kumar
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2532965
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, we provide a simple and effective solution to realize efficient volume depletion and therefore, significantly reduce the OFF-state leakage current of a junctionless FET (JLFET) by replacing the SiO2 by HfO2 in the buried oxide (BOX). Using calibrated 2-D simulations, we show that the JLFET with a high-k BOX (HB JLFET) exhibits a considerably high ION/IOFF ratio of ~106 even for a channel length of 20 nm. Further, we demonstrate that the use of a high-k BOX leads to a reduction in both gate capacitance Cg and gate-to-drain feedback (Miller) capacitance Cgd.