Open AccessIntroduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window
Author(s) -
Jiyong Woo,
Attilio Belmonte,
Augusto Redolfi,
Hyunsang Hwang,
Malgorzata Jurczak,
Ludovic Goux
Publication year - 2016
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2016.2526632
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
In this paper, we optimize a WO3\Al2O3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing a WO3 layer formed by thermal oxidation of a W plug, the hourglass shape of the conductive filament is desirably controlled, enabling excellent switching behavior. We demonstrate a clear improvement of the microstructure and density of the WO3 layer by increasing the oxidation time and temperature, resulting in a strong increase of the high-resistance-state breakdown voltage. The high quality WO3 microstructure allows thus the use of a larger reset pulse amplitude resulting both in larger memory window and failure-free write cycling.