Open AccessHigh-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
Author(s) -
Erdin Ture,
Peter Bruckner,
Birte-Julia Godejohann,
Rolf Aidam,
Mohamed Alsharef,
Ralf Granzner,
Frank Schwierz,
Rudiger Quay,
Oliver Ambacher
Publication year - 2015
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2015.2503701
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors are highly-scaled having 100 nm of gate length, which introduces the condition of a short channel. It is demonstrated that higher sub-threshold slopes, reduced drain-induced barrier lowering and better overall off-state performances have been achieved by the nano-channel tri-gate HEMTs with an AlGaN barrier. A lattice-matched InAlGaN barrier with the help of the fin-shaped nano-channels provide improved gate control, increasing current densities, and transconductance gm. In a direct comparison, very high drain current densities (~3.8 A/mm) and gm (~550 mS/mm) have further been obtained by employing a pure AlN barrier.