Open AccessComparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics
Author(s) -
Dan Li,
Baili Zhang,
Haijun Lou,
Lining Zhang,
Xinnan Lin,
Mansun Chan
Publication year - 2015
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2015.2475163
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed analysis is presented by inspections of the channel charge density and electric field profile. On the other hand, numerical simulations of TFETs with the Fermi-Dirac (F-D) statistics give larger current even in the sub-threshold region. It is attributed to the larger electric field across the tunnel junction between degenerated channel and heavily doped source which governs the interband tunneling process. As a result, F-D statistics should be utilized when modeling the tunneling current in TFETs.