Open AccessFerroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
Author(s) -
Min Hung Lee,
Y.-T. Wei,
C. Liu,
J.-J. Huang,
Ming Tang,
Yu-Lun Chueh,
K.-Y. Chu,
Miin-Jang Chen,
Heng-Yuan Lee,
Yu-Sheng Chen,
Li-Heng Lee,
Ming-Jinn Tsai
Publication year - 2015
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2015.2435492
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of $I_{\rm DS} $ . A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.