Open AccessTCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
Author(s) -
Tongshan Lu,
Chenghua Wang
Publication year - 2022
Publication title -
ieee access
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.587
H-Index - 127
ISSN - 2169-3536
DOI - 10.1109/access.2022.3206401
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation shows that temperature has a significant influence on the trends of heavy-ions-induced current. The peak value of drain current and collected charge in MOSFET reach the maximum value at 200 K, while the SET fall time decreases monotonously as temperature decrease from 300 K to 77 K at four LET values. The extracted analysis found that the enhancement of bipolar amplification effect is the main reason for the increase of collected charge and broader pulse width at high temperatures. The above conclusions provide a theoretical basis for the wide application of 65nm devices in 77 K-300 K space environment.