Open AccessFully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts
Author(s) -
Ahid S. Hajo,
Sascha Preu,
Leonid Kochkurov,
Thomas Kusserow,
Oktay Yilmazoglu
Publication year - 2021
Publication title -
ieee access
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.587
H-Index - 127
ISSN - 2169-3536
DOI - 10.1109/access.2021.3122379
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows improved performance at zero-bias than a GaAs based detector with a simulated capacitance of 0.5 fF and a series resistance of 29.7 $\Omega $ . Thus, the calculated maximum cut-off frequency of 2.6 THz was obtained for a NW contacted vertical InGaAs THz detector. Initial THz measurements were carried out using a common THz setup for frequencies up to 1.2 THz. A responsivity of 0.81 A/W and a low noise-equivalent power (NEP) value of 7 pW/ $ {~\sqrt {Hz}}$ at 1 THz were estimated using the measured IV-characteristics of the zero-bias NW-InGaAs based THz Schottky detector.