Investigation of Packaging Solutions for SiC MOSFET Baseplateless Modules
Author(s) -
Elena Mengotti,
Ivana Kovacevic-Badstuebner,
Enea Bianda,
Christoph Kenel,
Denis Musella,
Amanda Pasqualini,
Gerd Schlottig,
Joni Jormanainen,
Joni-Markus Hietanen,
Ulrike Grossner
Publication year - 2025
Publication title -
ieee transactions on power electronics
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2025.3618096
Subject(s) - power, energy and industry applications , aerospace , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , fields, waves and electromagnetics , general topics for engineers , nuclear engineering , signal processing and analysis , transportation
This article presents a comparative study on power cycling capabilities of 1200 V Silicon Carbide (SiC) mosfet baseplateless power modules with similar current rating from four suppliers, which employ different packaging techniques. The PC test results have been evaluated with sufficient statistics in order to address the long-term reliability performance and to objectively compare the different packaging solutions. Clear differences in the power cycling (PC) reliability as well as in thermal management properties have been observed among these technologies, and three distinct PC lifetime bounds are derived. Furthermore, the results show that improving die-attach and bond-wire top-interconnect can significantly increase the PC lifetime. The identified bounds can be further utilized as a benchmark for selection of power modules and positioning novel packaging techniques. With this study the importance of the selected package solution and the relevant consequences for the industrial application are highlighted.
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