
Power Cycling Testing for Power Semiconductor Switches: Methods, Standards, Limitations, and Outlooks
Author(s) -
Yi Zhang,
Patrick Heimler,
James Opondo Abuogo,
Xinyue Zhang,
Yichi Zhang,
Dong Xie,
Yuhao Zhang,
Kaichen Zhang,
Xiang Li,
Haoze Luo,
Ralf Schmidt,
Frede Blaabjerg,
Huai Wang,
Thomas Basler
Publication year - 2025
Publication title -
ieee transactions on power electronics
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2025.3595180
Subject(s) - power, energy and industry applications , aerospace , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , fields, waves and electromagnetics , general topics for engineers , nuclear engineering , signal processing and analysis , transportation
Reliability is a critical performance metric for power semiconductor switches and power electronic systems. Yet guidance on how to test and quantify that reliability is fragmented in the existing literature, particularly with the rapid adoption of wide-bandgap (WBG) devices and novel packaging technologies. This review brings guidance on what designers, reliability engineers, and researchers need to know about power cycling testing (PCT). We provide three major contents: (i) introducing how new materials and packaging shift dominant failure mechanisms; (ii) comparing the main PCT standards (JEDEC, AEC, IEC, AQG) and explaining why the “test-to-fail” standard principle is overtaking legacy “test-to-pass” rules; and (iii) summarizing the unique challenges and existing solutions of applying PCT methods to WBG devices. Notably, to the best of our knowledge, this is the first in-depth analysis of the newly released IEC 60749-34:2025 and AQG 324:2025, benchmarked against their earlier editions. Moreover, by collecting more than 200 testing samples from the existing literature, we also offer the first generic lifetime model that spans Si, SiC, multiple bond-wire materials, and die-attach technologies. Finally, the limitations and associated open questions are discussed to identify future research opportunities.
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