Exploring the relation between SEEs caused by heavy-ion irradiation and defects in SiC devices | Zendy

H. Goncalves de Medeiros | Zendy; C. Martinella | Zendy; M. Belanche | Zendy; N. Fur | Zendy; P. Kumar | Zendy; M. I. M. Martins | Zendy; M. Nagel | Zendy; S. Peracchi | Zendy; R. Drury | Zendy; Z. Pastuovic | Zendy; U. Grossner | Zendy

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Exploring the relation between SEEs caused by heavy-ion irradiation and defects in SiC devices

Author(s) -

H. Goncalves de Medeiros,

C. Martinella,

M. Belanche,

N. Fur,

P. Kumar,

M. I. M. Martins,

M. Nagel,

S. Peracchi,

R. Drury,

Z. Pastuovic,

U. Grossner

Publication year - 2025

Publication title -

ieee transactions on nuclear science

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 0.537

H-Index - 122

eISSN - 1558-1578

pISSN - 0018-9499

DOI - 10.1109/tns.2025.3576491

Subject(s) - nuclear engineering , bioengineering

Heavy-ion irradiation with different linear energy transfers (LETs) and ion penetration ranges were used to investigate the radiation tolerance of SiC power diodes. Single event leakage current (SELC) degradation was observed for ion ranges shorter than the epitaxial layer thickness. To elucidate the root cause of the observed radiation effects, deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) were performed. Both, the ratio between the boron peak contributions and their capture cross-section as measured directly, exhibit a change in value after heavy-ion irradiation.

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