Fully-Tunable Tunnel-Coupled Quantum Dots and Charge Sensing in a Commercial 22nm FD-SOI Process | Zendy

C. Power | Zendy; M. Moras | Zendy; A. Sokolov | Zendy; C. Rohrbacher | Zendy; X. Wu | Zendy; S.V. Amitonov | Zendy; I. Kriekouki | Zendy; A. Apra | Zendy; P. Giounanlis | Zendy; M. Asker | Zendy; M. Harkin | Zendy; P. Hanos-Puskai | Zendy; P. Bisiaux | Zendy; I. Bashir | Zendy; D. Redmond | Zendy; D. Leipold | Zendy; R.B. Staszewski | Zendy; B. Barry | Zendy; N. Samkharadze | Zendy; E. Blokhina | Zendy

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Fully-Tunable Tunnel-Coupled Quantum Dots and Charge Sensing in a Commercial 22nm FD-SOI Process

Author(s) -

C. Power,

M. Moras,

A. Sokolov,

C. Rohrbacher,

X. Wu,

S.V. Amitonov,

I. Kriekouki,

A. Apra,

P. Giounanlis,

M. Asker,

M. Harkin,

P. Hanos-Puskai,

P. Bisiaux,

I. Bashir,

D. Redmond,

D. Leipold,

R.B. Staszewski,

B. Barry,

N. Samkharadze,

E. Blokhina

Publication year - 2025

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2025.3595384

Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX TM industrial process. These quantum dots are formed in the device channel between polysilicon gates. We report precise control over inter-dot coupling, bias triangle formation, and single electron box sensing in a commercial process for the first time.

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