
Broadband point source for terahertz silicon guides
Author(s) -
Daniel Headland,
Harrison Lees,
Withawat Withayachumnankul,
Guillermo Carpintero
Publication year - 2025
Publication title -
ieee antennas and wireless propagation letters
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 1.328
H-Index - 117
eISSN - 1548-5757
pISSN - 1536-1225
DOI - 10.1109/lawp.2025.3592920
Subject(s) - fields, waves and electromagnetics
There is a need for compact, broadband, efficient radiators for terahertz integrated circuits, to serve as feed for large-aperture quasi-optics, or as antenna elements in phased arrays. We present a condensed, subwavelength progressive transition between a terahertz micro-scale dielectric waveguide and a dielectric slot radiating aperture. The result is an endfire point-source radiator spanning >2.2:1, from <185 GHz to 410 GHz, which is fabricated in a single etch step from a high-resistivity float-zone intrinsic silicon wafer. The radiation phase center deviates by just ∼500 μm across the operation bandwidth—less than one free-space wavelength.
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