Material Gain Simulation of In(As)SbBi Quantum Wells on InSb Substrate for Mid-Infrared Laser Applications

The mid infrared (mid-IR) spectral range holds significant importance in laser technology because of its unique characteristics and broad range of potential applications, including gas sensing. This paper discusses the possibility of constructing structures for mid-IR lasers operating on the InSb substrate based on interband transitions. The study demonstrates the potential of bismuth-related quantum wells (QWs) and alloyed semiconductor materials for long-wavelength (LWIR) laser applications, providing insight into their electronic properties and potential for device optimization. Gain spectra were calculated for different scenarios, revealing the dominance of TE or TM modes depending on the material composition and carrier concentration. The gain spectrum widens with increasing QW width, and its intensity decreases with the growth of As. The material system under consideration is well suited for the (6–8, $\mu$ m) wavelength range and can be considered a promising candidate for LWIR devices.