Impact of TiN Thickness Uniformity on the Reliability of n-FinFETs | Zendy

Mingyang Sun | Zendy; Yunfei Shi | Zendy; Hong Yang | Zendy; Qingyuan Li | Zendy; Qianqian Liu | Zendy; Qingzhu Zhang | Zendy; Bo Tang | Zendy; Tao Yang | Zendy; Junfeng Li | Zendy; Huaxiang Yin | Zendy; Xiaolei Wang | Zendy; Jun Luo | Zendy; Wenwu Wang | Zendy

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Impact of TiN Thickness Uniformity on the Reliability of n-FinFETs

Author(s) -

Mingyang Sun,

Yunfei Shi,

Hong Yang,

Qingyuan Li,

Qianqian Liu,

Qingzhu Zhang,

Bo Tang,

Tao Yang,

Junfeng Li,

Huaxiang Yin,

Xiaolei Wang,

Jun Luo,

Wenwu Wang

Publication year - 2025

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 0.69

H-Index - 31

eISSN - 2168-6734

DOI - 10.1109/jeds.2025.3612160

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

This work investigates the impact of Titanium Nitride (TiN) thickness uniformity on the electrical performance and reliability by comparing n-type FinFETs with TiN layers fabricated using physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. While both device types exhibit similar threshold voltages ( 24 mV), the FinFETs with non-uniform TiN thickness demonstrate significantly worse reliability under Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress conditions (11% and 24%). Through comprehensive electrical characterization and TCAD simulations, the observed degradation is attributed to spatial variations in the TiN work function, which induce stronger localized electric fields. These localized fields accelerate interface and oxide trap generation, leading to higher threshold voltage shifts and trap densities. The results highlight the importance of TiN thickness uniformity in suppressing degradation mechanisms and ensuring high-performance, reliable FinFET operation.

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