The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1/f Noise | Zendy

Yi Jiang | Zendy; Luping Wang | Zendy; Kai Chen | Zendy; Rui Su | Zendy; Luyu Yang | Zendy; Dawei Gao | Zendy; Junkang Li | Zendy; Ran Cheng | Zendy; Rui Zhang | Zendy

Open Access

The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1/f Noise

Author(s) -

Yi Jiang,

Luping Wang,

Kai Chen,

Rui Su,

Luyu Yang,

Dawei Gao,

Junkang Li,

Ran Cheng,

Rui Zhang

Publication year - 2025

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 0.69

H-Index - 31

eISSN - 2168-6734

DOI - 10.1109/jeds.2025.3593374

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

This study shows a novel dual-frequency charge-pumping method, developed to quantitatively characterize the frequency response characteristics of interface traps at the HfO2/Si interface. The response frequency of the interface traps (fit), or their capture/emission time, has been accurately evaluated in the range of 5-100 MHz across different energy levels by modulating the charge-pumping voltage waveforms. The analysis of fit provides valuable insights into the 1/f noise behavior of MOS devices, as confirmed by the observed correlation between 1/f noise and fit in the typical HfO2/Si n-MOSFETs. Additionally, it was found that the gate oxide traps are predominantly generated at a distance of 0.45 nm away from the HfO2/Si interface, and at an energy of 0.33 eV below conduction band minimum (Ec), under a PBTI stress.

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