Open AccessImpact of Gamma Ray Irradiation on the Blocking Characteristics of Edge Termination on 4H-SiC and A Novel Anti-Ionizing Radiation Technology
Author(s) -
Chuan-Han Chen,
Bing-Yue Tsui,
Der-Sheng Chao
Publication year - 2025
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 0.69
H-Index - 31
eISSN - 2168-6734
DOI - 10.1109/jeds.2025.3574497
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
The impact of gamma ray irradiation on the blocking characteristics of edge termination on 4H-SiC has been investigated. The dominant mechanism for the degradation of breakdown voltage (VBD) is the trapping of net positive charges in the field oxide (FOX), while the increase in interface state density can be ignored. Through measurements of FOX MOSFETs and edge termination test structures, we found that edge termination with LOCal Oxidation of SiC (LOCOSiC) FOX exhibits lower variation in VBD compared to conventional CVD FOX. Furthermore, it shows almost no susceptibility to gamma-ray irradiation up to 250 kGy. Therefore, it is recommended to utilize LOCOSiC FOX to mitigate the impact of irradiation on the blocking characteristics of SiC power devices’ edge termination.