Open AccessStacked-Via Metal Wall Suppressing Global Flying Crosstalk Validated in RF Switch Circuits in 45nm SOI
Author(s) -
Weiquan Hao,
Xunyu Li,
Zijin Pan,
Runyu Miao,
Zijian Yue,
Albert Wang
Publication year - 2025
Publication title -
ieee access
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 0.587
H-Index - 127
eISSN - 2169-3536
DOI - 10.1109/access.2025.3612283
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
Evolution of 5G and 6G wireless communications brings in new challenges to RF front-end module (FEM) integrated circuit (IC) designs. Higher frequencies, wider frequency spectrum and more frequency bands necessitate increasingly complex RF FEM IC architectures, which are extremely sensitive to global flying crosstalk occurring in the back-end-of-line (BEOL) stack containing complex metal interconnects. This paper reports a new 3D in-BEOL stacked-via vertical metal wall structure in standard CMOS to efficiently suppress global flying noises within BEOL, which is validated in silicon ICs using 38GHz single-pole double-throw (SPDT) traveling wave switch circuits fabricated in a foundry 45nm silicon-on-insulator (SOI) CMOS process technology. Measurement shows significant inter-switch flying crosstalk reduction of ~17 dB at 38GHz.
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