A Soft Error Self-Resilience Radiation-Hardened 14T SRAM for Aerospace Applications | Zendy

Guguloth Anjaneyulu | Zendy; Asisa Kumar Panigrahy | Zendy; Mukku Pavan Kumar | Zendy; Shams Ul Haq | Zendy; Abdolreza Darabi | Zendy; Erfan Abbasian | Zendy; Priyanka Sharma | Zendy; M Durga Prakash | Zendy

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A Soft Error Self-Resilience Radiation-Hardened 14T SRAM for Aerospace Applications

Author(s) -

Guguloth Anjaneyulu,

Asisa Kumar Panigrahy,

Mukku Pavan Kumar,

Shams Ul Haq,

Abdolreza Darabi,

Erfan Abbasian,

Priyanka Sharma,

M Durga Prakash

Publication year - 2025

Publication title -

ieee access

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 0.587

H-Index - 127

eISSN - 2169-3536

DOI - 10.1109/access.2025.3598000

Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation

Various charged particles in space threaten memory circuit integrity and dependability, including photons, alpha particles, and high-energy ions outside the Low Earth Orbit region. These particles particularly affect conventional 6T SRAM by disrupting stored bits, leading researchers to explore radiation-hardened SRAM chips and the addition of extra nodes to memory cells to recover lost data. A novel self resilience radiation-hardened 14T (SRRH-14T) SRAM cell with redundant nodes is presented in this work to solve the soft error problem. The suggested SRRH-14T memory performance compared to well-known radiation-hardened cells, such as 6T-SRAM, Quatro-10T, SEA-14T, RH-14T, QCCS-12T, and RRS-14T. The proposed SRRH-14T memory cell applies to a minimal sensitive node layout area separation to protect against multiple node interruptions. Additionally, the proposed SRRH-14T demonstrates performance enhancements of 1.22x, 1.03x, 1.09x, 1.06x, and 1.02x relative to 6T-SRAM, Quatro-10T, SEA-14T, RH-14T, and RRS-14T, respectively.

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