A Comprehensive Compact Model for Multilevel Switching in TaOx-based Memristive 1T-1R Cells | Zendy

Seokki Sonc | Zendy; Ankit Bende | Zendy; Daniel Schon | Zendy; Rana Walied Ahmad | Zendy; Dennis Nielinger | Zendy; Vikas Rana | Zendy; Stephan Menzel | Zendy

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A Comprehensive Compact Model for Multilevel Switching in TaOx-based Memristive 1T-1R Cells

Author(s) -

Seokki Sonc,

Ankit Bende,

Daniel Schon,

Rana Walied Ahmad,

Dennis Nielinger,

Vikas Rana,

Stephan Menzel

Publication year - 2025

Publication title -

ieee access

Language(s) - English

Resource type - Magazines

SCImago Journal Rank - 0.587

H-Index - 127

eISSN - 2169-3536

DOI - 10.1109/access.2025.3590140

Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation

Filamentary switching memristive devices based on the valence change mechanism (VCM) are promising for non-volatile memory applications due to their ability to store multiple resistance states within a single device. To facilitate the integration into circuits, this study presents an advanced compact model designed for multilevel switching in the VCM devices serially connected with transistors in a 1T-1R configuration. This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance ( R th,eff ) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. The validation with TaO x -based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. This model offers a robust tool for designing reliable, high-density multilevel ReRAM memory system.

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