Open AccessNegative Capacitance Field-Effect Transistor with Hetero-Metal-Gate to Suppress the Reverse Drain-Induced Barrier Lowering
Author(s) -
Jae Yeon Park,
Seungwon Go,
Dong Keun Lee,
Seonggeun Kim,
Sihyun Kim,
Sangwan Kim
Publication year - 2025
Publication title -
ieee access
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 0.587
H-Index - 127
eISSN - 2169-3536
DOI - 10.1109/access.2025.3576583
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
In this paper, the reverse drain-induced barrier lowering (RDIBL) in the negative capacitance field-effect transistor (NCFET) is discussed. It is found that the RDIBL is attributed to the increase of barrier height between channel and drain with the higher drain voltage (VDS). To address this issue, a hetero-metal-gate negative capacitance field-effect transistor (HM NCFET), which features the metal-gate composed of two different work function materials at source and drain sides, is proposed and its electrical characteristics are analyzed with the help of technology computer-aided design (TCAD) simulation. In contrast to the conventional NCFET, the HM NCFET can efficiently suppress RDIBL from -57 mV/V to -3 mV/V by decreasing the work function of metal-gate at drain side from 4.6 eV to 4.0 eV, while the work function of metal-gate at source side is fixed at 4.6 eV.
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