Open AccessInvestigating the Electric Field Influence on Total Ionization Dose Effects in Space Radiation for Carbon Nanotube Field Effect Transistors
Author(s) -
Yanan Liang,
Qian Chen,
Rui Chen,
Runjie Yuan,
Ziyu Wang,
Hailong Yu,
Jianwei Han
Publication year - 2025
Publication title -
ieee access
Language(s) - English
Resource type - Magazines
SCImago Journal Rank - 0.587
H-Index - 127
eISSN - 2169-3536
DOI - 10.1109/access.2025.3572530
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
Carbon nanotube field effect transistors (CNTFETs) are considered ideal components for radiation-hardened integrated circuits (ICs) due to their material and structural properties. CNTFETs have been shown to have good tolerance to total ionizing dose (TID) effects under no-bias condition. However, in practical applications, ICs typically operate under specific bias conditions. It is necessary to evaluate the TID effects of CNTFETs under different bias conditions. A wafer-level chip probe power-up system was designed to power CNTFETs during Co-60 γ-ray irradiation. The experimental results show that the bias condition greatly affects the TID tolerance of the CNTFET. Under the no-bias condition, the CNTFET is tolerant to TID up to 2000 k rad (Si). On the contrary, under off-bias condition, the failure occurs at 200 k rad (Si). The failure of the CNTFET is characterized by out-of-control gate voltage and its failure mechanism is analyzed. It is attributed to the breakdown of the gate dielectric (HfO2) between the gate and the source via the time-dependent dielectric breakdown (TDDB) effect.