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A multiple‐common‐lines method to determine the orientation of snapshot diffraction patterns from single particles
Author(s) -
Zhou Liang,
Zhang TianYi,
Liu ZhongChuan,
Liu Peng,
Dong YuHui
Publication year - 2014
Publication title -
acta crystallographica section a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.742
H-Index - 83
ISSN - 2053-2733
DOI - 10.1107/s2053273314007049
Subject(s) - snapshot (computer storage) , diffraction , optics , orientation (vector space) , materials science , physics , computer science , mathematics , geometry , operating system
With the development of X‐ray free‐electron lasers (XFELs), it is possible to determine the three‐dimensional structures of noncrystalline objects with coherent X‐ray diffraction imaging. In this diffract‐and‐destroy mode, many snapshot diffraction patterns are obtained from the identical objects which are presented one by one in random orientations to the XFEL beam. Determination of the orientation of an individual object is essential for reconstruction of a three‐dimensional structure. Here a new method, called the multiple‐common‐lines method, has been proposed to determine the orientations of high‐ and low‐signal snapshot diffraction patterns. The mean errors of recovered orientations (α, β, γ) of high‐ and low‐signal patterns are about 0.14, 0.06, 0.12 and 0.77, 0.31, 0.60°, respectively; both sets of errors can meet the requirements of the reconstruction of a three‐dimensional structure.