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Electronic stabilization by occupational disorder in the ternary bismuthide Li 3– x – y In x Bi ( x ≃ 0.14, y ≃ 0.29)
Author(s) -
Ovchinnikov Alexander,
Bobev Svilen
Publication year - 2020
Publication title -
acta crystallographica section c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 17
ISSN - 2053-2296
DOI - 10.1107/s2053229620006439
Subject(s) - ternary operation , superstructure , crystallography , tetrahedron , doping , crystal structure , materials science , chemistry , physics , condensed matter physics , thermodynamics , computer science , programming language
A ternary derivative of Li 3 Bi with the composition Li 3– x – y In x Bi ( x ≃ 0.14, y ≃ 0.29) was produced by a mixed In+Bi flux approach. The crystal structure adopts the space group Fd m (No. 227), with a = 13.337 (4) Å, and can be viewed as a 2 × 2 × 2 superstructure of the parent Li 3 Bi phase, resulting from a partial ordering of Li and In in the tetrahedral voids of the Bi fcc packing. In addition to the Li/In substitutional disorder, partial occupation of some Li sites is observed. The Li deficiency develops to reduce the total electron count in the system, counteracting thereby the electron doping introduced by the In substitution. First‐principles calculations confirm the electronic rationale of the observed disorder.