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Accidental formation of Gd 4 (SiO 4 ) 2 OTe: crystal structure and spectroscopic properties
Author(s) -
Daszkiewicz Marek,
Gulay Lubomir D.
Publication year - 2015
Publication title -
acta crystallographica section c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 17
ISSN - 2053-2296
DOI - 10.1107/s2053229615011651
Subject(s) - crystal structure , telluride , materials science , crystallography , ion , single crystal , doping , crystal (programming language) , gadolinium , rare earth , excitation , luminescence , chemistry , optoelectronics , physics , organic chemistry , metallurgy , quantum mechanics , computer science , programming language
Designing new functional materials with increasingly complex compositions is of current interest in science and technology. Complex rare‐earth‐based chalcogenides have specific thermal, electrical, magnetic and optical properties. Tetragadolinium bis[tetraoxidosilicate(IV)] oxide telluride, Gd 4 (SiO 4 ) 2 OTe, was obtained accidentally while studying the Gd 2 Te 3 –Cu 2 Te system. The crystal structure was determined by means of single‐crystal X‐ray diffraction. The compound crystallizes in the space group Pnma . Three symmetry‐independent gadolinium sites were determined. The excitation and emission spectra were collected at room temperature and at 10 K. Gd 4 (SiO 4 ) 2 OTe appears to be a promising optical material when doped with rare‐earth ions.