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Structural transformations in the low‐temperature grown GaAs with superlattices of Sb and P δ‐layers
Author(s) -
Baidakova M. V.,
Bert N. A.,
Chaldyshev V.V.,
Nevedomsky V. N.,
Yagovkina M. A.,
Preobrazhenskii V. V.,
Putyato M. A.,
Semyagin B. R.
Publication year - 2013
Publication title -
acta crystallographica section b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.604
H-Index - 33
eISSN - 2052-5206
pISSN - 2052-5192
DOI - 10.1107/s2052519213000183
Subject(s) - superlattice , materials science , crystallography , condensed matter physics , optoelectronics , chemistry , physics
The structure of low‐temperature grown GaAs with equidistant δ‐layers of Sb and P was studied by analysis of the X‐ray curves, which was supported by optical absorption measurements and transmission electron microscopy. The simultaneous fitting of the X‐ray reflectivity curve and diffraction ones for GaAs (004) and GaAs (115) crystallographic planes provided reliable information about the period of δ‐layer superlattice, thickness of the Sb and P δ‐layers, and amount of excess As. Variation of these parameters was documented when excess As precipitated into As nanoinclusions upon annealing. The Sb and P δ‐layers impact differently on the As precipitation processes in low‐temperature grown GaAs. The combination of Sb and P δ‐layers appears to be an effective tool for spatial patterning of the nanoinclusion array and prevention of the defect formation under annealing.