Open AccessGeometric determination of direction of dislocations using synchrotron X‐ray transmission topography
Author(s) -
Tuomi T. O.,
Lankinen A.,
Anttila O.
Publication year - 2020
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577520011248
Subject(s) - synchrotron , synchrotron radiation , diffraction , dislocation , optics , silicon , materials science , x ray , diffraction topography , zone axis , x ray crystallography , crystallography , physics , electron diffraction , optoelectronics , chemistry , composite material
When performing transmission polychromatic beam topography, the extensions to the line segments of the diffraction images of a straight dislocation are shown to intersect at a single point on the X‐ray film. The location of this point, together with the diffraction pattern recorded on the film by synchrotron radiation, gives the crystallographic direction [ hkl ] of the dislocation unambiguously. The results of two synchrotron topography experiments are presented. Very long dislocations found in the center of a large 450 mm‐diameter Czochralski silicon crystal align with the growth direction [001]. In the other silicon sample, the dislocations are of mixed type and along the [01 1 ] direction.