Demonstration of a ring‐FEL as an EUV lithography tool | Zendy

Lee Jaeyu | Zendy; Jang G. | Zendy; Kim J. | Zendy; Oh B. | Zendy; Kim D.-E. | Zendy; Lee S. | Zendy; Kim J.-H. | Zendy; Ko J. | Zendy; Min C. | Zendy; Shin S. | Zendy

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Demonstration of a ring‐FEL as an EUV lithography tool

Author(s) -

Lee Jaeyu,

Jang G.,

Kim J.,

Oh B.,

Kim D.-E.,

Lee S.,

Kim J.-H.,

Ko J.,

Min C.,

Shin S.

Publication year - 2020

Publication title -

journal of synchrotron radiation

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.172

H-Index - 99

ISSN - 1600-5775

DOI - 10.1107/s1600577520005676

Subject(s) - extreme ultraviolet lithography , storage ring , extreme ultraviolet , ring (chemistry) , optics , lithography , thermal emittance , physics , wavelength , radiation , beam (structure) , optoelectronics , light source , materials science , chemistry , laser , organic chemistry

This paper presents the required structure and function of a ring‐FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m‐long straight section that conducts an extremely low emittance beam from a fourth‐generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring‐FEL as a EUVL source are described.

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