Open AccessDemonstration of a ring‐FEL as an EUV lithography tool
Author(s) -
Lee Jaeyu,
Jang G.,
Kim J.,
Oh B.,
Kim D.-E.,
Lee S.,
Kim J.-H.,
Ko J.,
Min C.,
Shin S.
Publication year - 2020
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577520005676
Subject(s) - extreme ultraviolet lithography , storage ring , ring (chemistry) , optics , extreme ultraviolet , lithography , thermal emittance , radiation , wavelength , physics , beam (structure) , optoelectronics , light source , materials science , chemistry , laser , organic chemistry
This paper presents the required structure and function of a ring‐FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m‐long straight section that conducts an extremely low emittance beam from a fourth‐generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring‐FEL as a EUVL source are described.