Open AccessTime‐resolved X‐ray reflection phases of the nearly forbidden Si(222) reflection under laser excitation
Author(s) -
Tsai Yi-Wei,
Chang Ying-Yi,
Lee Jey-Jau,
Liu Wen-Chung,
Wu Yu-Hsin,
Liu Wei-Rein,
Liu Hsing-Yu,
Lee Kun-Yuan,
Weng Shih-Chang,
Sheu Hwo-Shuenn,
Chiu Mau-Sen,
Lee Yin-Yu,
Hsu Chia-Hung,
Chang Shih-Lin
Publication year - 2019
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577519003503
Subject(s) - excitation , laser , atomic physics , silicon , electron density , reflection (computer programming) , electron excitation , phase (matter) , diffraction , materials science , electron , optics , chemistry , physics , optoelectronics , organic chemistry , quantum mechanics , computer science , programming language
The covalent electron density, which makes Si(222) measurable, is subject to laser excitation. The three‐wave Si(222)/() diffraction at 7.82 keV is used for phase measurements. It is found that laser excitation causes a relative phase change of around 4° in Si(222) in the first 100 ps of excitation and this is gradually recovered over several nanoseconds. This phase change is due to laser excitation of covalent electrons around the silicon atoms in the unit cell and makes the electron density deviate further from the centrosymmetric distribution.