Open AccessDistinguishing nitrogen‐containing sites in SiO 2 /4H‐SiC(0001) after nitric oxide annealing by X‐ray absorption spectroscopy
Author(s) -
Isomura Noritake,
Kutsuki Katsuhiro,
Kataoka Keita,
Watanabe Yukihiko,
Kimoto Yasuji
Publication year - 2019
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577519001504
Subject(s) - x ray absorption spectroscopy , annealing (glass) , analytical chemistry (journal) , nitrogen , spectroscopy , oxide , absorption spectroscopy , materials science , nitric oxide , x ray , x ray photoelectron spectroscopy , spectral line , absorption (acoustics) , chemistry , nuclear magnetic resonance , optics , metallurgy , physics , organic chemistry , quantum mechanics , astronomy , composite material , chromatography
The atomic structure of nitrogen at the SiO 2 /4H‐SiC(0001) interface has been investigated using X‐ray absorption spectroscopy (XAS) in two nitric oxide annealed samples, one of which was oxidized in dry O 2 (NO‐POA) prior to the experiment. The peak shapes and energies of the observed and simulated spectra are in agreement and indicate that the N‐containing sites could be the substitutional C site at the interface for the NO‐annealed sample and the interstitial site in the interior of SiC for the NO–POA‐annealed sample. XAS analysis distinguished between the N‐containing sites at the SiO 2 /SiC interface.