
Deep X‐ray lithography system with a uniform and high‐accuracy fabrication area established in beamline BL11 at NewSUBARU
Author(s) -
Takeuchi Masaya,
Yamaguchi Akinobu,
Utsumi Yuichi
Publication year - 2019
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577518017939
Subject(s) - beamline , materials science , synchrotron radiation , lithography , x ray lithography , microfabrication , optics , synchrotron , fabrication , etching (microfabrication) , beam (structure) , flux (metallurgy) , photolithography , optoelectronics , resist , nanotechnology , physics , layer (electronics) , medicine , alternative medicine , pathology , metallurgy
A new lithography system to fabricate high‐aspect‐ratio 3D microstructures was developed at the NewSUBARU synchrotron radiation facility (University of Hyogo, Japan). The X‐ray beam generated by this system has high parallelism (horizontal and vertical divergence angles of 278 µrad and 14 µrad, respectively) and high photon flux (31 mW mm −2 at a beam current of 300 mA). The high photon flux and exposure area of the system were validated and a beam‐scan method for a large exposure area with a uniform dose distribution has been proposed. In addition, the deep X‐ray lithography performance was characterized using a conventional photosensitive material and the synchrotron‐radiation‐induced direct etching of polytetrafluoroethylene (PTFE) was demonstrated. An enlargement of the microfabrication area up to 100 mm × 100 mm while contemporarily ensuring high uniformity was achieved.