Open AccessCharacterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X‐ray diffraction
Author(s) -
Davtyan Arman,
Lehmann Sebastian,
Kriegner Dominik,
Zamani Reza R.,
Dick Kimberly A.,
Bahrami Danial,
Al-Hassan Ali,
Leake Steven J.,
Pietsch Ullrich,
Holý Václav
Publication year - 2017
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577517009584
Subject(s) - wurtzite crystal structure , stacking , diffraction , materials science , nanowire , stacking fault , characterization (materials science) , bar (unit) , transmission electron microscopy , optics , condensed matter physics , crystallography , molecular physics , physics , chemistry , optoelectronics , nuclear magnetic resonance , meteorology
Coherent X‐ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the direction in the vicinity of the wurtzite Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.