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Polarized hard X‐ray photoemission system with micro‐positioning technique for probing ground‐state symmetry of strongly correlated materials
Author(s) -
Fujiwara Hidenori,
Naimen Sho,
Higashiya Atsushi,
Kanai Yuina,
Yomosa Hiroshi,
Yamagami Kohei,
Kiss Takayuki,
Kadono Toshiharu,
Imada Shin,
Yamasaki Atsushi,
Takase Kouichi,
Otsuka Shintaro,
Shimizu Tomohiro,
Shingubara Shoso,
Suga Shigemasa,
Yabashi Makina,
Tamasaku Kenji,
Ishikawa Tetsuya,
Sekiyama Akira
Publication year - 2016
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577516003003
Subject(s) - linear polarization , polarization (electrochemistry) , photoelectric effect , optics , ground state , materials science , physics , atomic physics , chemistry , laser
An angle‐resolved linearly polarized hard X‐ray photoemission spectroscopy (HAXPES) system has been developed to study the ground‐state symmetry of strongly correlated materials. The linear polarization of the incoming X‐ray beam is switched by a transmission‐type phase retarder composed of two diamond (100) crystals. The best value of the degree of linear polarization was found to be −0.96, containing a vertical polarization component of 98%. A newly developed low‐temperature two‐axis manipulator enables easy polar and azimuthal rotations to select the detection direction of photoelectrons. The lowest temperature achieved was 9 K, offering the chance to access the ground state even for strongly correlated electron systems in cubic symmetry. A co‐axial sample monitoring system with long‐working‐distance microscope enables the same region on the sample surface to be measured before and after rotation. Combining this sample monitoring system with a micro‐focused X‐ray beam by means of an ellipsoidal Kirkpatrick–Baez mirror (25 µm × 25 µm FWHM), polarized valence‐band HAXPES has been performed on NiO for voltage application as resistive random access memory to demonstrate the micro‐positioning technique and polarization switching.

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