Open AccessPolytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X‐ray diffraction
Author(s) -
Köhl Martin,
Schroth Philipp,
Minkevich Andrey A.,
Hornung JeanWolfgang,
Dimakis Emmanouil,
Somaschini Claudio,
Geelhaar Lutz,
Aschenbrenner Timo,
Lazarev Sergey,
Grigoriev Daniil,
Pietsch Ullrich,
Baumbach Tilo
Publication year - 2015
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577514023480
Subject(s) - wurtzite crystal structure , nanowire , nucleation , materials science , diffraction , stacking , scattering , crystallography , zinc , condensed matter physics , nanotechnology , optics , chemistry , physics , organic chemistry , metallurgy
In GaAs nanowires grown along the cubic [111] c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111) c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X‐ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18–25 nm. The measurements are performed with a nano‐focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111) c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.