Open AccessFull‐field X‐ray reflection microscopy of epitaxial thin‐films
Author(s) -
Laanait Nouamane,
Zhang Zhan,
Schlepütz Christian M.,
VilaComamala Joan,
Highland Matthew J.,
Fenter Paul
Publication year - 2014
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577514016555
Subject(s) - optics , diffraction , microscopy , materials science , resolution (logic) , image resolution , scattering , reflection (computer programming) , ferroelectricity , microscope , x ray , epitaxy , optical microscope , thin film , optoelectronics , physics , nanotechnology , computer science , dielectric , scanning electron microscope , layer (electronics) , artificial intelligence , programming language
Novel X‐ray imaging of structural domains in a ferroelectric epitaxial thin film using diffraction contrast is presented. The full‐field hard X‐ray microscope uses the surface scattering signal, in a reflectivity or diffraction experiment, to spatially resolve the local structure with 70 nm lateral spatial resolution and sub‐nanometer height sensitivity. Sub‐second X‐ray exposures can be used to acquire a 14 µm × 14 µm image with an effective pixel size of 20 nm on the sample. The optical configuration and various engineering considerations that are necessary to achieve optimal imaging resolution and contrast in this type of microscopy are discussed.