Open AccessScanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory
Author(s) -
Nho Hyun Woo,
Kim Jong Yun,
Wang Jian,
Shin HyunJoon,
Choi SungYool,
Yoon Tae Hyun
Publication year - 2014
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577513026696
Subject(s) - resistive random access memory , xanes , graphene , transmission electron microscopy , materials science , synchrotron , oxide , in situ , microscopy , optoelectronics , analytical chemistry (journal) , nanotechnology , optics , chemistry , spectral line , electrode , physics , organic chemistry , chromatography , astronomy , metallurgy
Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K ‐ and O K ‐edges, both the RRAM junctions and the I 0 junction were fabricated on a single Si 3 N 4 membrane to obtain local XANES spectra at these absorption edges with more delicate I 0 normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K ‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.