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Grazing‐incidence X‐ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system
Author(s) -
Barnscheidt Yvo,
Schmidt Jan,
Osten H. Jörg
Publication year - 2020
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576720009255
Subject(s) - diffraction , bragg's law , optics , materials science , epitaxy , lattice (music) , azimuth , x ray crystallography , x ray , diffraction topography , condensed matter physics , layer (electronics) , crystallography , physics , chemistry , nanotechnology , acoustics
The Ge/Si(001) system has been analysed by grazing‐incidence X‐ray diffraction on a standard laboratory X‐ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2gθ/ϕ scans along [100], [110] and [310] directions as well as azimuthal ϕ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.