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Detailed surface analysis of V‐defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum
Author(s) -
Gao Jiang-Dong,
Zhang Jian-Li,
Zhu Xin,
Wu Xiao-Ming,
Mo Chun-Lan,
Pan Shuan,
Liu Jun-Lin,
Jiang Feng-Yi
Publication year - 2020
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576720000163
Subject(s) - chemical vapor deposition , materials science , metal , deposition (geology) , silicon , chemical engineering , nanotechnology , metallurgy , geology , paleontology , sediment , engineering
An error in the article by Gao, Zhang, Zhu, Wu, Mo, Pan, Liu & Jiang [ J. Appl. Cryst. (2019), 52 , 637–642] is corrected.