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Real‐ and Q ‐space travelling: multi‐dimensional distribution maps of crystal‐lattice strain (ϵ 044 ) and tilt of suspended monolithic silicon nanowire structures
Author(s) -
Dolabella Simone,
Frison Ruggero,
Chahine Gilbert A.,
Richter Carsten,
Schulli Tobias U.,
Tasdemir Zuhal,
Alaca B. Erdem,
Leblebici Yusuf,
Dommann Alex,
Neels Antonia
Publication year - 2020
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576719015504
Subject(s) - tilt (camera) , silicon , nanowire , lattice (music) , materials science , crystal structure , space (punctuation) , silicon nanowires , lattice constant , crystallography , condensed matter physics , optics , molecular physics , optoelectronics , geometry , physics , chemistry , diffraction , computer science , mathematics , acoustics , operating system
Silicon nanowire‐based sensors find many applications in micro‐ and nano‐electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro‐ and nano‐fabricated silicon‐based structures adopting the scanning X‐ray diffraction microscopy technique for mapping the in‐plane crystalline strain (ϵ 044 ) and tilt of a device which includes pillars with suspended nanowires on a substrate. It is shown how the micro‐ and nanostructures of this new type of nanowire system are influenced by critical steps of the fabrication process, such as electron‐beam lithography and deep reactive ion etching. X‐ray analysis performed on the 044 reflection shows a very low level of lattice strain (<0.00025 Δ d / d ) but a significant degree of lattice tilt (up to 0.214°). This work imparts new insights into the crystal structure of micro‐ and nanomaterial‐based sensors, and their relationship with critical steps of the fabrication process.