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X‐ray back‐diffraction: can we further increase the energy resolution by tuning the energy slightly below that of exact backscattering?
Author(s) -
Hönnicke Marcelo Goncalves,
Cusatis Cesar,
Conley Raymond,
Kakuno Edson Massayuki,
Kasman Elina,
Huang XianRong,
Bouet Nathalie,
Zhou Juan,
Cai Yong Q.,
Basso Marques Joao,
Vicentin Flavio Cesar
Publication year - 2019
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576719012925
Subject(s) - diffraction , flatness (cosmology) , resolution (logic) , beam (structure) , residual , optics , crystal (programming language) , materials science , x ray , beam divergence , energy (signal processing) , mosaicity , beam energy , x ray crystallography , physics , computational physics , laser beam quality , mathematics , laser beams , laser , computer science , algorithm , quantum mechanics , cosmology , artificial intelligence , programming language
X‐ray beams at energies tuned slightly below that of exact backscattering (extreme conditions, where X‐ray back‐diffraction is almost extinguished – called residual XBD) are better focused if the experiment is carried out at lower energies in order to avoid multiple‐beam diffraction effects. Following previous work by the authors [Hönnicke, Conley, Cusatis, Kakuno, Zhou, Bouet, Marques & Vicentin (2014). J. Appl. Cryst. 47 , 1658–1665], herein efforts are directed towards characterizing the residual XBD beam of an ultra‐thin Si 220 crystal (UTSiXTAL) at ∼3.2 keV. To achieve the residual XBD condition the UTSiXTAL was cooled from 310 to 273 K. The results indicate that under this extreme condition the energy resolution can be further improved. Issues with the energy resolution measurements due to incoming beam divergence and the ultra‐thin crystal flatness are discussed.