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A study of the strain distribution by scanning X‐ray diffraction on GaP/Si for III–V monolithic integration on silicon
Author(s) -
Zhou Ang,
Ping Wang Yan,
Cornet Charles,
Léger Yoan,
Pédesseau Laurent,
Favre-Nicolin Vincent,
Chahine Gilbert André,
Schülli Tobias Urs,
Eymery Joël,
Bahri Mounib,
Largeau Ludovic,
Patriarche Gilles,
Durand Olivier,
Létoublon Antoine
Publication year - 2019
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576719008537
Subject(s) - diffraction , materials science , silicon , optics , synchrotron , scattering , substrate (aquarium) , epitaxy , crystallography , surface finish , x ray crystallography , scanning electron microscope , condensed matter physics , layer (electronics) , optoelectronics , physics , composite material , chemistry , oceanography , geology
A synchrotron‐based scanning X‐ray diffraction study on a GaP/Si pseudo‐substrate is reported, within the context of the monolithic integration of photonics on silicon. Two‐dimensional real‐space mappings of local lattice tilt and in‐plane strain from the scattering spot distributions are measured on a 200 nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub‐micrometre X‐ray diffraction microscopy technique (K‐Map). Cross‐hatch‐like patterns are observed in both the local tilt mappings and the in‐plane strain mappings. The origin of the in‐plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in‐plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in‐plane strain and the free surface roughness is also discussed using a statistical method.