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Significant texture improvement in single‐crystalline‐like materials on low‐cost flexible metal foils through growth of silver thin films
Author(s) -
Li Yongkuan,
Sun Sicong,
Gao Ying,
Yao Yao,
Galstyan Eduard,
Rudra Pratap,
Rathi Monika,
Dutta Pavel,
Pouladi Sara,
Ryou Jae Hyun,
Selvamanickam Venkat
Publication year - 2019
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576719007295
Subject(s) - texture (cosmology) , materials science , tin , epitaxy , substrate (aquarium) , sputtering , thin film , sputter deposition , ion beam assisted deposition , pole figure , composite material , metallurgy , optics , layer (electronics) , nanotechnology , ion beam , beam (structure) , oceanography , physics , artificial intelligence , computer science , image (mathematics) , geology
Low texture spreads of single‐crystalline‐like materials are critical for high performance of low‐cost flexible semiconductors and second‐generation high‐temperature superconductors based on metal foils. For texture improvement, a single‐crystalline‐like Ag film is epitaxially grown on an ion‐beam‐assisted deposition TiN substrate using magnetron sputtering. Ultra‐low texture spreads are found in the thin Ag film (∼330 nm), with an out‐of‐plane texture spread (Δω) of ∼1.03° and an in‐plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single‐crystalline‐like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single‐crystalline‐like Ag films with various thicknesses.