Premium
Detailed surface analysis of V‐defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition
Author(s) -
Gao Jiang-Dong,
Zhang Jian-Li,
Zhu Xin,
Wu Xiao-Ming,
Mo Chun-Lan,
Pan Shuan,
Liu Jun-Lin,
Jiang Feng-Yi
Publication year - 2019
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576719005521
Subject(s) - materials science , facet (psychology) , crystallography , chemical vapor deposition , silicon , growth rate , dislocation , condensed matter physics , bar (unit) , deposition (geology) , composite material , optoelectronics , chemistry , geometry , psychology , social psychology , mathematics , physics , personality , meteorology , big five personality traits , paleontology , sediment , biology
The growth mechanism of V‐defects in GaN films was investigated. It was observed that the crystal faces of both the sidewall of a V‐defect and the sidewall of the GaN film boundary belong to the same plane family of , which suggests that the formation of the V‐defect is a direct consequence of spontaneous growth like that of the boundary facet. However, the growth rate of the V‐defect sidewall is much faster than that of the boundary facet when the V‐defect is filling up, implying that lateral growth of planes is not the direct cause of the change in size of V‐defects. Since V‐defects originate from dislocations, an idea was proposed to correlate the growth of V‐defects with the presence of dislocations. Specifically, the change in size of the V‐defect is determined by the growth rate around dislocations and the growth rate around dislocations is determined by the growth conditions.