Premium
Fabrication and characterization of ZnMgO nanowalls grown on 4H‐SiC by molecular beam epitaxy
Author(s) -
Pietrzyk Mieczyslaw A.,
Wierzbicka Aleksandra,
Stachowicz Marcin,
Jarosz Dawid,
Kozanecki Adrian
Publication year - 2019
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576718016850
Subject(s) - molecular beam epitaxy , materials science , characterization (materials science) , fabrication , epitaxy , diffraction , optoelectronics , nanostructure , crystal (programming language) , scanning electron microscope , nanotechnology , crystallography , layer (electronics) , optics , chemistry , composite material , medicine , alternative medicine , physics , pathology , computer science , programming language
Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H‐SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X‐ray diffraction measurements.