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X‐ray topo‐tomography studies of linear dislocations in silicon single crystals
Author(s) -
Asadchikov Victor,
Buzmakov Alexey,
Chukhovskii Felix,
Dyachkova Irina,
Zolotov Denis,
Danilewsky Andreas,
Baumbach Tilo,
Bode Simon,
Haaga Simon,
Hänschke Daniel,
Kabukcuoglu Merve,
Balzer Matthias,
Caselle Michele,
Suvorov Ernest
Publication year - 2018
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s160057671801419x
Subject(s) - x ray , tomography , dislocation , synchrotron , single crystal , characterization (materials science) , resolution (logic) , materials science , algebraic reconstruction technique , silicon , crystallography , optics , computed tomography , physics , computer science , radiology , chemistry , artificial intelligence , optoelectronics , medicine , composite material
This article describes complete characterization of the polygonal dislocation half‐loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X‐ray topo‐tomography technique using both a conventional laboratory setup and the high‐resolution X‐ray image‐detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.