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Inversion domain boundary structure of laterally overgrown c ‐GaN domains including the inversion from Ga to N polarity at a mask pattern boundary
Author(s) -
Kim Hwa Seob,
Lee Hyunkyu,
Jang Dongsoo,
Kim Donghoi,
Kim Chinkyo
Publication year - 2018
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s160057671801350x
Subject(s) - inversion (geology) , polarity (international relations) , epitaxy , geometry , boundary (topology) , optics , condensed matter physics , materials science , physics , chemistry , mathematics , geology , mathematical analysis , nanotechnology , paleontology , biochemistry , layer (electronics) , structural basin , cell
During epitaxial lateral overgrowth, the lateral polarity inversion of c ‐GaN domains from Ga to N polarity, triggered at the boundary of an SiO 2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the plane, although the formation energy of IDBs on the plane is known to be lower than that on the plane. A model that takes a geometrical factor into consideration can explain this preferential tendency of IDB formation on the plane, and computational simulations based on the proposed model are consistent with experimental results. In contrast with the vertically upright IDBs observed in N‐to‐Ga polarity inversion, vertically slanted IDBs were formed in some samples during the inversion from Ga to N polarity. These polarity inversions, which appeared to randomly occur on the mask pattern, turned out to be triggered at the mask pattern boundaries.