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Stacking faults in β‐Ga 2 O 3 crystals observed by X‐ray topography
Author(s) -
Yamaguchi Hirotaka,
Kuramata Akito
Publication year - 2018
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576718011093
Subject(s) - stacking , planar , crystallography , materials science , octahedron , vacancy defect , crystal (programming language) , dislocation , slip (aerodynamics) , wafer , diffraction , partial dislocations , lattice (music) , plane (geometry) , stacking fault , condensed matter physics , crystal structure , geometry , optics , chemistry , physics , nanotechnology , computer graphics (images) , mathematics , computer science , acoustics , programming language , thermodynamics , organic chemistry
Planar defects in ‐oriented β‐Ga 2 O 3 wafers were studied using X‐ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X‐ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on the plane. The SF formation was found to be supported by a unique structural feature of the plane as a slip plane; the plane consists of close‐packed octahedral Ga and O layers, allowing slips to form SFs. Vacancy arrays along the b axis in the octahedral Ga layer reduce the self‐energy of the edge component in the partial dislocation extending along the b axis. It is speculated that the SFs occur during the crystal growth process for unknown reasons and then recover owing to elastic instability after initially increasing in size as crystal growth proceeds. Based on this analysis, a structural model for the SFs is proposed.