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Diffuse X‐ray scattering from local chemical inhomogeneities in InGaN layers
Author(s) -
Holý Václav,
Kryśko Marcin,
Leszczyński Michał
Publication year - 2018
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s1600576718007173
Subject(s) - reciprocal lattice , scattering , diffraction , intensity (physics) , optics , materials science , x ray crystallography , physics , x ray , epitaxy , space (punctuation) , reciprocal , condensed matter physics , crystallography , computational physics , chemistry , nanotechnology , layer (electronics) , philosophy , linguistics
Diffuse X‐ray scattering from random chemical inhomogeneities in epitaxial layers of InGaN/GaN was simulated using linear elasticity theory and kinematical X‐ray diffraction. The simulation results show the possibility of determining the r.m.s. deviations of the local In content and its lateral correlation length from reciprocal‐space maps of the scattered intensity. The reciprocal‐space distribution of the intensity scattered from inhomogeneities is typical and it can be distinguished from other sources of diffuse scattering such as threading or misfit dislocations.